Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...
Mass spectrometry, by contrast, is a powerful technique for the analysis of any process gas. Careful consideration of differences in pressure, reaction time scales and process flow is essential for ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback