Samsung has demonstrated the world’s first in-memory computing technology based on MRAM. Samsung has a paper on the subject in Nature. This paper showcases Samsung’s effort to merge memory and system ...

“Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses ...

Resistive memory array with cross-point structure has great potential for high-density information storage and large-scale neural networks. However, the crosstalk caused by the leakage current flowing ...

HOUSTON – (July 9, 2013) – A Rice University laboratory pioneering memory devices that use cheap, plentiful silicon oxide to store data has pushed them a step further with chips that show the ...

Creating 3D memory chips isn’t too hard. But packing the memory cells so they contain a lot of dense storage is a problem that has bedeviled chip makers for a while. Memory chip startup Crossbar said ...