When it comes to power electronics, circuit designs usually are based on the performance and cost of the available semiconductor devices. Topologies are developed to take advantage of the capabilities ...
Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...
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