A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...

Cities have air-quality monitoring stations where pollutants such as NO₂, CO, and SO₂ are measured, while industrial systems ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

TOKYO, Dec 5, 2019 - (JCN Newswire) - - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat ...

Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm ...

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.

Cree has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4μm or 0.25μm gate length fabrication process, the ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...