IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
International Rectifier (IR) announces the IRF6706S2PbF and IRF6798MPbF DirectFET MOSFET chipset that provides high efficiency for 12 V input synchronous buck applications including servers, desktops, ...
Increasing demands for improvements in power supply efficiency means that traditional rectification using standard, ultrafast and Schottky diodes is gradually being replaced by elaborate schemes using ...
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