MALVERN, Pa., May 10, 2023 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 17 new Gen 3 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) ...

The SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) offer industry-leading low forward voltage and fast recovery time. It helps improve power conversion ...

Silicon carbide (SiC) diodes have already penetrated the quickly expanding solar inverter market, particularly in Europe. Cree's 1200V SiC Schottky diodes are being used in place of their silicon (Si) ...

Featuring a merged PIN Schottky (MPS) design, the devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and ...

Solar microinverters require high performance diodes to maximize the energy harvested from solar panels while reducing the cost per watt. Silicon Carbide Schottky diodes could provide the needed ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

For the past two decades, Insulated Gate Bipolar Transistors (IGBTs) and their associated silicon (Si)-based Free Wheeling Diodes (FWDs) have been the mainstay switching devices in 3-phase inverters.

DUBLIN, Oct. 7, 2015 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/4rv28f/cree_1700v_sic) has announced the addition of the "CREE ...