Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

Thin film technology focuses on the deposition and analysis of functional material layers on a substrate. These layers are essential building blocks in modern devices, like the microchips found in ...

The state of the target varies with the parameters for the three sputtering modes, and the SMD consists of various voltage-current (V-I) curves at different nitrogen contents and sputtering currents.

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...